Nanoquest III/IV Ion Beam Etching System

Precision Etching for Production Environments

The Nanoquest III/IV Batch Ion Beam Etching System from Intlvac Thin Film is among the most economical and versatile production ion beam etching platforms on the market today. Designed for clean room operation, this system provides automated control of ion beam energy and etch angle, enabling precision processes from simple inert etching to complex reactive operations.

Nanoquest III/IV Ion Beam Etching System

Precision Etching for Production Environments

The Nanoquest III/IV Batch Ion Beam Etching System from Intlvac Thin Film is among the most economical and versatile production ion beam etching platforms on the market today. Designed for clean room operation, this system provides automated control of ion beam energy and etch angle, enabling precision processes from simple inert etching to complex reactive operations.

Key Features

Versatile and Economical

  • Independent control of ion energy, ion current density, and incidence angle
  • Next-generation contamination-resistant, filamentless ion source
  • Capable of uniform etching on noble metals and exotic thin film materials

Superior Etch Uniformity

  • Substrate rotation and enhanced ion beam optics improve etch consistency
  • Adjustable stage angle optimizes process and cleans secondary sidewall deposition
  • Water-cooled double-axis stage supports up to 3 platens for high throughput
  • Flat-plate planetary motion stage with variable incident angle
  • Direct water-cooled platens for thermal control

Engineered for Clean Room Integration

The Nanoquest III/IV is tailored for clean room use, with the etch module positioned in the service area to ensure minimal contamination. Its double-door design allows for servicing from either side, and UHV design rules enable extremely low base pressures. High-speed vacuum pumps ensure rapid pump down and reduce ion beam gas collisions.

System Configuration

Chamber Construction: Stainless steel using UHV-compatible techniques, electro-polished exterior

Cooling System: Welded stainless steel cooling channels in a web-like pattern for efficient heat dissipation

Access & Observation: Hinged front and rear doors, multiple viewports including optional load lock view

Vacuum Performance:

  • 5×10⁻⁷ Torr in 2 hours
  • 5×10⁻⁸ Torr in 24 hours

Vacuum Pump Options: Dry pumps with optional Cryopump or Maglev Turbo pump

22 cm RF Ion Source

The integrated 22 cm RF ion beam source is capable of delivering over 1 Amp of ion beam current across a 100 to 1500 eV range.

Highlights:

  • Plasma Discharge: High-density plasma via RF ICP technology, filamentless for longer operation
  • Ion Optics: Self-aligning for consistent runs and extended grid life, constructed of durable Molybdenum
  • Modular Design: Fully accessible from chamber with adjustable throw distance
  • Power Supply: Frequency-matched RF supply offers rapid response and high contamination resistance
  • Control System: Operated via Intlvac's LabVIEW interface and Allen Bradley PLC

SIMS End-Point Detection (Optional)

Precision, repeatable etch control is achieved with the optional Secondary Ion Mass Spectrometry (SIMS) system.

Standard Capabilities:

  • High sensitivity SIMS with pulse ion counting detector
  • Triple filter quadrupole (300 amu range)
  • Differentially pumped manifold with flange to chamber
  • Integrated ion optics with energy analyzer
  • Penning gauge with interlocks for overpressure protection
  • < ±0.5% signal height variation over 24 hours

Control and Automation

The LabVIEW-based control system provides complete, intuitive control through a graphical interface. Full automation sequences include:

  • Electro-pneumatic actuator management
  • Automated chamber pump down and venting via Intlvac AutoVac Controller
  • Full integration with all process parameters

Optional Upgrades

  • Turbo and water vapor pumps for reactive gas processes
  • Integrated substrate chiller with programmable thermal profiles
  • Additional gas lines for expanded process flexibility

Ready for High-Throughput Demands

Whether etching complex patterns or handling high volumes, the Nanoquest III/IV stands out with:

  • Multi-planet support
  • Direct water cooling under each rotating wafer planet
  • Seamless service access for minimized downtime

The Nanoquest Pico offers the performance and flexibility needed for advanced thin film etching applications—all in a compact, lab-friendly form factor.

Optional Upgrades

  • Turbo and water vapor pumps for reactive gas processes
  • Integrated substrate chiller with programmable thermal profiles
  • Additional gas lines for expanded process flexibility

Ready for High-Throughput Demands

Whether etching complex patterns or handling high volumes, the Nanoquest III/IV stands out with:

  • Multi-planet support
  • Direct water cooling under each rotating wafer planet
  • Seamless service access for minimized downtime

The Nanoquest Pico offers the performance and flexibility needed for advanced thin film etching applications—all in a compact, lab-friendly form factor.

Ion Beam Etching System

Explore our Latest Brochure about the Nanoquest III System

  • Versatile and Economical
  • Superior Etch Uniformity
  • Direct Water-cooled Stage

The Nanoquest III Ion Beam Etching System combines a water-cooled, rotating stage, a 16cm RF ion source, an easily accessible stainless steel vacuum chamber, cryogenic high vacuum pumping system, automatic pump down and venting, atmosphere to high vacuum gauging, mass flow controllers, chamber cabinet, and electronic control console.

Designed for clean room operation, the Nanoquest III keeps the etch module in the service area of the clean room. System components, such as shields and other serviceable items, are easily accessed in the service area. A double door etch module allows servicing from either side of the chamber. UHV design rules ensure that the etch module and load lock chamber achieve very low base pressures. High speed vacuum pumps not only provide a fast pump down, but also reduce ion beam gas collisions.

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